Light power enhancement of violet LEDs using AlGaN-based epitaxial structure
The growths of AlN and AlGaN materials were carried out in a home-built metal organic chemical vapor deposition (MOCVD) system.The AlN template was characterized by X-ray diffraction (XRD) and it showed the full width at half magnitude (FWHM) of the x-ray (002) scan rocking curve was only 28 arc seconds,while the FWHM of (102) plane was 252 arc seconds.The results suggested a high quality epitaxial material was obtained.Subsequently,an AlGaN-based violet LED was designed on this template by using AlGaN material as the base.The Al composition of electronic blocking layer (EBL) was optimized.By a quick on-wafer electroluminescence (EL) test,it was demonstrated that the output light intensity of the new structure was at least 15% stronger in comparison to that of the traditional GaN-based violet LED.Finally,fully packaged LEDs were fabricated and the luminous power of the new structure was measured by Spherical integrated system.It was confirmed that a 43% increase of the output power can be obtained.
MOCVD AlGaN violet LED
Jinshun Yue Ying Gao Guohua Zhang Yi Liu
Qingdao Jason Electric CO.,Ltd,Qingdao,266101,China Lanzhou national middle school,Lanzhou,730030,China
国际会议
武汉
英文
572-577
2013-06-15（万方平台首次上网日期，不代表论文的发表时间）