Effect of sputtering conditions on the microstructures of YNiBi Thin Film

摘要：

　　Half-Heusler compound YNiBi thin films have been prepared by direct current (DC)magnetron sputtering from an YNiBi target.The film structure and surface morphology of YNiBi thin films were analyzed with X-ray diffraction (XRD) and atomic force microscopy (AFM).The electrical properties of the films were studied by Hall measurements.XRD patterns show that the films prepared at lower sputtering pressure and higher growth temperature exhibit minimum full width at half maximum (FWHM) and maximum diffraction peaks which belong to the same family of crystal planes.Results of AFM reveal that the surface of a variety of fabricated YNiBi films is smooth and keeps good adhesion to the substrate.The increasing of substrate temperature and slightly lowering of sputtering pressure are in favor of reducing the root mean square roughness during magnetron sputtering process.The film with high crystallinity has an electrical conductivity of 938 S/cm and carrier concentration of 2.15× 1021 cm-3.

关键词： Half-Heusler YNiBi thin film MgO Magnetron sputtering

作者: Guohua Wang Niuyi Sun Juan Qin Weimin Shi Linjun Wang

作者单位: School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China

会议类型: 国际会议

会议名称: 2013 International Conference on Energy Research and Power Engineering(2013能源研究与电力工程国际会议)(ERPE2013)

会议地点: 郑州

会议语种:英文

页码: 923-926

在线出版日期: 2013-05-24（万方平台首次上网日期，不代表论文的发表时间）