AlNGaN HEMT T-gate Optimal Design

摘要：

　　The GaN HEMT is widely used in high-frequency aspects,use the T-gate to reduce gate resistance is one of the most effective methods to improve the the device maximum oscillation frequency (fmax).But fmax is very sensitive to T-gate size,improper selection may reduce fmax,Therefore,in order to reduce the cost of production,it is necessary to select appropriate simulation T-gate size.We have worked out AlGaN/GaN HEMT with gate length of 0.17μm and fmax values 110GHz.Accuracy of the simulation model is verified by experiment.Then detailed simulates the impact of the T-gate size and we obtain ptimized T-gate size range.

关键词： frequency characteristics GaN HEMT T-gate size Simulation model

作者: zhangxiaowei Jiakejin Wangyuangang Fengzhihong Zhaozhengping

作者单位: Hebei University of Technology, College of information engineering, Tianjin, 300130 ;China Electroni Hebei University of Technology, College of information engineering, Tianjin, 300130 China Electronics Technology Group 13 Institute, Key Laboratory of special integrated circuit, shiji

会议类型: 国际会议

会议名称: 2013 2nd International Symposium on Computer,Communication,Control and Automation(ISCCCA-13)(2013年第二届计算机、通信与自动化国际会议)

会议地点: 太原

会议语种:英文

页码: 845-847

在线出版日期: 2013-04-06（万方平台首次上网日期，不代表论文的发表时间）