Terahertz transmission properties of V02 thin films deposited on c-and m-plane sapphire substrates by pulsed laser deposition
Vanadium dioxide (VO2) films were grown on c-and m-plane sapphire substrates by pulsed laser deposition (PLD) technique with VO2 ceramic target.The VO2 films with preferred growth orientation and uniform dense distribution have been achieved on both substrates,as confirmed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM).The terahertz (THz) transmission properties of VO2 thin films were studied by terahertz time-domain spectroscopy (THz-TDS).The results indicate that the THz transmission properties of VO2 films are strongly influenced by the sapphire substrate orientation,suggesting that VO2 films are ideal material candidates for THz modulation.
Vanadium dioxide terahertz time-domain spectroscopy c-and m-plane sapphire
Xiaoqiang Kou Jiming Bian Zhikun Zhang
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, Liaoning, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, Liaoning,
国际会议
太原
英文
550-553
2013-03-22(万方平台首次上网日期,不代表论文的发表时间)