A novel ZnO-based graphite-insulator-semiconductor diode for transferable unipolar electronic devices

摘要：

　　In this paper,a novel ZnO-based graphite-insulator-semiconductor (GIS) diode was fabricated on graphite substrate by radio frequency (rf) magnetron sputtering.A SiO2 thin film was used as the insulator layer grown by electron beam evaporation technique.The measurement of current-voltage of the ZnO-based GIS diode showed a Schottky rectifying diode characteristic with a threshold voltage of 5.2 V and a poor leakage current of~10-3 A under a reverse bias condition.An interesting negative capacitance phenomenon was also observed from the GIS diode.The successful fabrication of ZnO-based GIS diode on graphite substrate offers the significant opportunity to be readily transferred onto any rigid or flexible foreign substrates,since the graphite substrate consists of weakly bonded layer structure.

关键词： ZnO Semiconductor Unipolar Electronic Devices Negative Capacitance Transferable Devices

作者: Zhikun Zhang Jiming Bian Xiaoqiang Kou

作者单位: School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, Liaoning, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, Liaoning,

会议类型: 国际会议

会议名称: 2nd International Conference on Polymer Composities and Polymer Testing (2013第二届高分子复合材料与高分子测试国际会议暨先进工业技术与方案国际会议)(ISPCPT2013)

会议地点: 太原

会议语种:英文

页码: 564-567

在线出版日期: 2013-03-22（万方平台首次上网日期，不代表论文的发表时间）