Analysis of Forward Tunnelling Current in GaN-based Blue LEDs

摘要：

　　We present a systematic analysis of the forward tunnelling current in GaN-based blue light-emitting diodes by using the current-voltage (I-V) measurements from 100 K to 300 K.The semi-log forward I-V curves in the above temperature range exhibit typical features of defect-assisted tunnelling mechanism,such as the temperature independent current slope and an ideality factor larger than 2.Exponential bias-and temperature-dependent characteristics of the tunnelling current have been observed,which are due to the bias-induced route change of the diagonal tunnelling and thermally-induced band gap shrinkage effect in the GaN materials,respectively.

关键词： forward tunnelling current GaN-based light-emitting diodes defect-assisted tunnelling

作者: Ren Jian Lisha Li Dawei Yan Xiaofeng Gu

作者单位: Key Laboratory of Advanced Process Control for Light Industry(Ministry of Education)Department of Electronic Engineering,Jiangnan University Wuxi,China

会议类型: 国际会议

会议名称: 2013 2nd International Conference on Computer Science and Electronics Engineering(ICCSEE2013)(2013年第二届计算机科学与电子工程国际会议)

会议地点: 杭州

会议语种:英文

页码: 822-825

在线出版日期: 2013-03-22（万方平台首次上网日期，不代表论文的发表时间）