A Threshold Voltage Model for the IMOS Device Using Hetero Structure

摘要：

　　IMOS allows very sharp subthreshold slopes,even down to a few mV/dec at room temperature.However,the device has serious reliability problems,such as large threshold voltage shifts,caused by hot carrier induced damage and the large supply voltage.Hetero IMOS,using the small bandgap material as the channel material,improves device reliability and decreases power consumption by reducing off-state currents and features a lower breakdown voltage compared to conventional IMOS.In this paper,a threshold voltage model is proposed in different distribution of surface electric field and in the condition of avalanche breakdown.The result is analyzed with the simulation data.It promotes the application of IMOS to VLSI design.

关键词： avalanche breakdown Hereto IMOS threshold voltage

作者: Heming Yao

作者单位: Beihang Sino-French Engineer School,Beihang University,Beijing,China

会议类型: 国际会议

会议名称: 2013 2nd International Conference on Computer Science and Electronics Engineering(ICCSEE2013)(2013年第二届计算机科学与电子工程国际会议)

会议地点: 杭州

会议语种:英文

页码: 1691-1694

在线出版日期: 2013-03-22（万方平台首次上网日期，不代表论文的发表时间）