The Properties Of Al203 Films Deposited Onto Al2O3-Tic And Si Substrates By RF Diode Sputtering
The A12O3 films were deposited onto Al2O3-TiC and Si (100) substrates by RF sputtering technique by varying powers sputter target,substrate bias voltages and fixed process pressure 25 mTorr which aim to achieve high deposition rate and investigated film properties onto different types.Result showed significant power sputter target to deposition rate both substrates and film properties depend on type of substrate.The power sputter target at 8kW and substrate bias voltage at-150 V is optimum deposition condition to provide deposition rate is 53.97nm/min for Al2O3-TiC substrate and 51.50nm/min for Si substrate.The A12O3 film deposited onto Al2O3-TiC substrate surface morphology displayed rather roughness than A12O3 film deposited onto Si substrate which verified from SEM and AFM as 0.99 nm (Ra) versus 0.46 nm (Ra).The film stress,hardness,reduces modulus and breakdown voltage (BDV) of A12O3 film deposited were higher than A12O3 film deposited on Al2O3-TiC substrates which were correspond to surface morphology.
Al2O3 Al2O3-TiC Si Film properties RF diode sputtering
H.Panitchakan P.Limsuwan
Department of Physic,Faculty of Science,King Mongkuts University of Technology Thonburi,126 pracha- Thailand Center of Excellence in Physics,CHE,Ministry of Education,Bangkok 10400,Thailand
国际会议
济南
英文
126-130
2012-12-29（万方平台首次上网日期，不代表论文的发表时间）