Hole Doping Through Indium Intercalation Into Nickel Phthalocyanine

摘要：

　　A new intercalation of indium and nickel phthalocyanine(NiPc) thin films is developed by using thermal co-evaporation technique.X-ray diffractometer(XRD) and optical absorption spectroscopy of In-doped NiPc suggest the crystal structure of In-doped NiPc is a-phase as same as that of pristine NiPc.Current-voltage characteristic of Shottky diode fabricated with In-doped NiPc thin film shows the enhancement of charge carrier concentration due to indium doping.Further photoelectron spectroscopy experiments prove that In-doped NiPc is hole transport material.

关键词： indium doped nickel phthalocyanine hole doping electron doping

作者: Pakorn Prajuabwan Sunit Rojanasuwan Annop Chanhom Anuchit Jaruvanawat Adirek Rangkasikorn Jiti Nukeaw

作者单位: College of Nano Technology,King Mongkuts Institute of Technology Ladkrabang,THAILAND;Thailand Cente College of Nano Technology,King Mongkuts Institute of Technology Ladkrabang,THAILAND;Thailand Cente

会议类型: 国际会议

会议名称: 2012 2nd International conference on Machinery Electronics and Control Engineering (2012年第二届国际机械电子与控制工程会议(ICMECE 2012))

会议地点: 济南

会议语种:英文

页码: 148-156

在线出版日期: 2012-12-29（万方平台首次上网日期，不代表论文的发表时间）