Research on the electro-exploding mechanism of Semiconductor Bridge
In an effort to elucidate the electro-exploding mechanism of semiconductor bridge (SCB),constant current was forced to flow through polysilicon bridge with a resistance about 1 Ω,while the response of voltage and current was measured to obtain its electro-exploding performances.The rise platform and subsequent peak in the current-time curve were observed.It is inferred from the optical signal that the first peak in the current curve results from the plasma generation of the bridge material.The entire electro-exploding process includes Joule heating,melting,vaporizing and plasma generating stage.The laws between performance parameters and the size or shape of bridge area were analyzed; it demonstrated that V-type angles on both ends of bridge were helpful for function time reducing,which provided an experimental basis for SCB design.
Semiconductor Bridge constant current electro-exploding mechanism performance parameters
Yong Li Bin Zhou Zhi-chun Qin Xin Jia Lei-ming Wen
1.School of Chemical Engineering, Nanjing University of Science & Technology, Nanjing 210094,Jiangsu, China
国际会议
北京
英文
326-332
2012-12-16（万方平台首次上网日期，不代表论文的发表时间）