Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection

摘要：

　　This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength.The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video,or power detectors.These include their fast time response,room temperature operation,simple structure and low cost.This paper describes the characterization of the metal-semiconductor Schottky diodes including principle,diode structure,non-linear voltage-current characteristic and signal-rectifying performance.For application,a quasi-optical THz detector was made by using the proposed Schottky diodes.It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna.The measurement results of the Schottky diode based detector show a good room temperature performance.

关键词： Meta-Semiconductor Planar Schottky diode Millimeter wave THz Detection

作者: Hairui Liu Junsheng Yu

作者单位: Beijing University of Posts and Telecommunications, Beijing, 100876, P.R.C

会议类型: 国际会议

会议名称: 2nd International Conference on Advanced Materials and Engineering Materials(第二届先进材料与工程材料国际会议)(ICAMEM2012)

会议地点: 北京

会议语种:英文

页码: 729-732

在线出版日期: 2012-12-16（万方平台首次上网日期，不代表论文的发表时间）