Improved Performance of 4H-SiC MESFET With Stepped-Channel

摘要：

　　A novel 4H-SiC MESFET with stepped-channel (stepped-spacer) structure is proposed for the first time and analyzed by 2D numerical simulation.Based on the stepped buried oxide structure of SOI which can produce additional electrical Electric field peaks,much more advantages can be obtained through a stepped-channel structure compared to that of the field terminal technology,such as an obvious increase of the breakdown voltage which is equal to the electric field to the path integral,and the lower capacitances lead to a higher cut-off frequency.The simulation results show that a 100% higher saturated drain current and a 153% larger breakdown voltage can be obtained utilizing the stepped-channel structure MESFET than those of the conventional counterpart.

关键词： 4H-SiC MESFET stepped-channel electric field crowding

作者: Hujun Jia Yintang Yang Lianjin Zhang Baoxing Duan

作者单位: Key Lab of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xian 710071, China

会议类型: 国际会议

会议名称: 3rd International Conference on Frontiers of Manufacturing and Design Science(第三届制造与设计科学前沿国际会议(ICFMD))

会议地点: 香港

会议语种:英文

页码: 21-25

在线出版日期: 2012-12-11（万方平台首次上网日期，不代表论文的发表时间）