Effects of Surface Treatment and Annealing on Properties of InN layers Grown Using Metal Organic Chemical Vapor Deposition

摘要：

　　We report the effects surface treatment and annealing had on the properties of InN layersgrown using metal organic chemical vapor deposition (MOCVD).The number of defects due to N vacancies decreased significantly with increasing annealing temperature.However,when the annealing temperature reached 700℃,the crystalline grain became larger on the film surfaces.Annealing at an appropriate temperature improved the crystalline quality and the electrical properties of the InN films.However,when the annealing temperature was too high,InN oxidized and even dissociated.

关键词： InN MOCVD GaN Surface Treatment Annealing

作者: Sheng-Po Chang Kuan-Jen Chen Po-Jui Kuo Yu-Zung Chiou

作者单位: Center for Micro/Nano Science and Technology and Advanced Optoelectronic Technology Center,National The Instrument Development Center, National Cheng Kung University, Tainan 701, Taiwan Department of Electrical Engineering & Institute of Microelectronics,National Cheng Kung University, Department of Electronics Engineering, Southern Taiwan University, Tainan 710, Taiwan

会议类型: 国际会议

会议名称: 3rd International Conference on Frontiers of Manufacturing and Design Science(第三届制造与设计科学前沿国际会议(ICFMD))

会议地点: 香港

会议语种:英文

页码: 190-196

在线出版日期: 2012-12-11（万方平台首次上网日期，不代表论文的发表时间）