Growth Time Influence on Polycrystalline α-HgI2 Films

摘要：

　　Polycrystalline α-HgI2 films have been grown on TFT substrates using hot-wall vapor phase deposition (HWPVD) with the different growth times.The influence of different growth times (1 hour,2 hours,3 hours,4 hours) on the structural and electrical properties of the polycrystalline α-HgI2 films is investigated.Metallurgical microscope,scan electron microscopes (SEM) and X-ray diffraction (XRD) characterization and the electric transport properties were investigated by the I-Vcharacteristics.The polycrystalline α-HgI2 films growth by 3 hours show more better performance than others.So we use it preparation a detector.Finally,capacitance frequency characteristics analysis showed the detector have good performance.

关键词： Vapor phase deposition Characterization α-HgI2 films Uniformity

作者: Gonglong Liu Lei Ma Yang Liao Weimin Shi Weiguang Yang Yuelu Zhang

作者单位: Department of Electronic Information Materials, School of Materials Science and Engineering,Shanghai The eighth design department of the Shanghai Aerospace Bureau, Shanghai Institute of Mechanical and

会议类型: 国际会议

会议名称: 3rd International Conference on Frontiers of Manufacturing and Design Science(第三届制造与设计科学前沿国际会议(ICFMD))

会议地点: 香港

会议语种:英文

页码: 263-267

在线出版日期: 2012-12-11（万方平台首次上网日期，不代表论文的发表时间）