Al-induced crystallization of amorphous silicon film

摘要：

　　Al-induced crystallization (AIC) method was used for obtaining polycrystalline silicon (poly-Si)film on glass substrate.The films with glass/a-Si:H/Al structure were fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and magnetic sputtering.Then the samples were sent to perform annealing treatments during the different temperatures and time.The experimental results demonstrate that a highly crystallized poly-Si sample can be achieved by annealing at 480℃ for 2h.The crystalline fraction (Xc) of the sample is about 99.1% and the Full Width at Half Maximum (FWHM) is 4.89cm-1.The average grain size of this sample is about 250nm.The energy dispersive spectroscopy (EDS) measurement confirms that the residual Al in the film is very little.

关键词： amorphous silicon Al induced crystallization polycrystalline silicon

作者: Pingsheng Zhou Weimin Shi Jing Jin Jun Qian Xiaolei Qu Linjun Wang

作者单位: School of Material Science and Engineering, Shanghai University, 149 Yanchang Rd., Shanghai,China, 200072

会议类型: 国际会议

会议名称: 3rd International Conference on Frontiers of Manufacturing and Design Science(第三届制造与设计科学前沿国际会议(ICFMD))

会议地点: 香港

会议语种:英文

页码: 292-296

在线出版日期: 2012-12-11（万方平台首次上网日期，不代表论文的发表时间）