Measurements of Youngs Modulus of Silicon Oxynitride Using Micro-cantilever Structure
Silicon oxynitride (SiON) is a kind of important material to fabricate micro-electro-mechanical system (MEMS) device due to its composition-dependent tunability in optical,electronic and mechanical properties.In this work,a SiON film with 25.78% nitrogen contents in film composition was deposited by RF magnetron sputtering.Micro SiON cantilevers were fabricated using MEMS sacrificial layer technology for tests.These cantilevers had the same thickness of 3.5 μm,the different length ranging from 150 μm to 400 μm and the different width ranging from 40 μm to 90 μm.The micro-cantilever bending tests were done with the help of nanomechanical test system to characterize the Youngs modulus of the SiON.The results showed that the Youngs modulus of the SiON was 256 GPa.Owing to cantilever testing can eliminate the affection of residual stress of the SiON film,the numerical value of the Youngs modulus we gained was more accurate than that early gained by other measuring methods.
Youngs modulus silicon oxynitride micro-cantilever bending test
Jian Dong Heng Jiang Xi Zeng
Key Laboratory of Special Purpose Equipment and Advanced Manufacturing Technology, Zhejiang University of Technology, Hangzhou, Zhejiang Province, 310032, China
国际会议
香港
英文
347-352
2012-12-11（万方平台首次上网日期，不代表论文的发表时间）