ESD Robustness Designs for the HV Power DEMOS

摘要：

　　Two kinds of efficient electrostatic discharge (ESD) protection circuits in lateral drain extended MOSFETs (DEMOSFETs) will be designed and investigated in this paper.One kind of these test samples is fabricated with an SCR structure,which has the lowest turned-on resistance when it is triggered by a high voltage of ESD event.The SCR circuit is the most efficient of all protection devices in terms of ESD performance per unit area.Furthermore,the other type of these DUTs is an SCR with RC-triggered structure,which will have a small trigger voltage (Vt1) under ESD event,and then it obtains a good ESD immunity level.

关键词： High Voltage (HV) Electrostatic Discharge (ESD) Drain Extended MOSFET (DEMOS) Field-oxide Device (FOD) SCR Trigger voltage (Vt1)

作者: Shen-Li Chen Chi-Ling Chu

作者单位: Dept.of Electronic Engineering, National United University, MiaoLi 360, Taiwan

会议类型: 国际会议

会议名称: 3rd International Conference on Frontiers of Manufacturing and Design Science(第三届制造与设计科学前沿国际会议(ICFMD))

会议地点: 香港

会议语种:英文

页码: 1286-1290

在线出版日期: 2012-12-11（万方平台首次上网日期，不代表论文的发表时间）