Prediction of Electromigration Induced Voids and Hillock for IC Interconnect Structures

摘要：

　　This paper investigates the electromigration (EM) induced void and hillock generation in IC interconnect structures.The driving force for electromigration induced failure considered here includes the electron wind force,stress gradient,temperature gradient,as well as the atomic density gradient,which were neglected in many of the existing studies on eletromigration.The comparison of void/hillock formation and the time to failure (TTF) life through numerical example of the SWEAT structure with the measurement results are studied and discussed.

关键词： electromigration interconnect failure life FEM

作者: Yuanxiang Zhang Jun Wu Yingyu Ji

作者单位: College of Mechanical Engineering,Quzhou University,Quzhou 324000,China

会议类型: 国际会议

会议名称: the 2012 National Conference on Digital Design and Manufacturing Technology (2012年全国数字化设计与制造技术会议(DDMTC 2012))

会议地点: 宁波

会议语种:英文

页码: 6-11

在线出版日期: 2012-11-12（万方平台首次上网日期，不代表论文的发表时间）