Growth and Characterization of 6H-SiC Substrate for LED Application

摘要：

　　High-quality N-doped 6H-SiC boule was grown by physical vapor deposition method.The crystal quality was evaluated using crossed polarizer,high-resolution x-ray diffraction (HRXRD),Raman spectroscopy,polarized light microscopy,atomic force microscopy (AFM).A mapping evaluation of HRXRD rocking curve reveals that the whole 6H-SiC wafer has quite uniform quality with the full width at half maximum at a range of 20~40 arcsec.The macroscopically crossed polarizer characterization and Raman spectrum mapping results indicate that the whole wafer is monotypic 6H-SiC without other polytypes.The micropipe density is 5 ~ 7/cm2 determined by mapping polarized light microscopy.The average surface roughness is as low as 0.1nm with clear step morphology determined by AFM.The resistivity is 0.01~0.015 ohm ·cm for the whole wafer.These characterizations imply that the N-doped 6H-SiC has a quite high single crystal quality and provide good substrate materials for SiC-based LED.

关键词： 6H-SiC Crystal growth Physical vapor transport Raman Micropipe defect

作者: Xiao Guo Xue-Chao Liu Hai-Kuan Kong Jun Xin Ze Xiong Wei Huang Yan-Qing Zheng Jian-Hua Yang Er-Wei Shi

作者单位: Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 20 Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 20

会议类型: 国际会议

会议名称: 9th China International Forum on Solid State Lighting(第九届中国国际半导体照明论坛)

会议地点: 广州

会议语种:英文

页码: 14-17

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）