会议专题

Improve Performance of InGaN/GaN Green Light Emitting Diodes with Stacked Quantum Dots Active Regions

  Abstract:The self-assembled lnGaN quantum dots (QDs) were grown using Stranski-Krastanov mode with Metal Organic Chemical Vapor Deposition (MOCVD) system.The atomic force microscopy measurements show the density of QDs is about 1011cm-2.The distribution of QDs height was bimodal with an average about 1.5 nm,which is confirmed by the high resolution transmission electron microscopy (HRTEM).The multi-QDs layers were stacked with graduated change growth pressure and temperature in order to retain the driving force of S-K growth mode.The green LEDs with stacked QDs layers and conventional MQWs were fabricated into 1000×1000 um2 with conventional mesa method.Electroluminescence (EL) measurement showed the peak wavelength of 520 nm with a blue shift of 2 nm under injection current up to 800 mA for QDs green LEDs.And the light output power of stacked QDs LEDs is 30% higher than that of conventional MQWs LEDs.Furthermore,the efficiency droop of stacked QDs LEDs is much lower than that of MQWs LEDs.

quantum dot stack self-assemble nitride efficiency droop

Jun Ma Jinmin Li Xiaoli Ji Xiaoyan Yi Xuecheng Wei Hongxi Lu Ruifei Duan Junxi Wang Yiping Zeng Guohong Wang

Research and Development Center for Semiconductor Lighting, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, P R China

国际会议

9th China International Forum on Solid State Lighting(第九届中国国际半导体照明论坛)

广州

英文

32-35

2012-11-05(万方平台首次上网日期,不代表论文的发表时间)