The Effect of 5-doping and Modulation-doping on Si-doped High AI Content n-AlxGa1-xN grown by MOCVD

摘要：

　　In this study,the effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x=0.55) epilayers grown by MOCVD has been investigated.Measured by XRD,AFM,contactless sheet resistance and Hall-effect test,σ-doped and modulation-doped n-AlxGa1-xN perform better crystal quality,surface morphology and electrical property compared with uniformly-doped n-AlxGa1-xN.These improvements attribute to SiNx growth mask induced by σ-doping layers and dislocation-blocking effect induced by both growth techniques.Besides,due to broadened doping profile ascribed to enhanced dopants diffusion in high growth temperature (1150 ℃) of n-Al0.55Ga0.45N,modulation-doped n-Al0.55Ga0.45N performs the similar property with σ-doped n-Al0.55Ga0.45N.

关键词： n-AlxGa1-xN MOCVD σ-doping modulation-doping dopants diffusion

作者: Shaoxin Zhu Jianchang Yan Jianping Zeng Ning Zhang Zhao Si Peng Dong Jinmin Li Junxi wang

作者单位: Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian, Beijing,100083, China

会议类型: 国际会议

会议名称: 9th China International Forum on Solid State Lighting(第九届中国国际半导体照明论坛)

会议地点: 广州

会议语种:英文

页码: 45-45

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）