GaN-based LEDs with Nitrogen Ion Implanted Current Blocking Layer
In this work,the GaN-based lateral LEDs with nitrogen implanted CBL for improving the light extraction efficiency (LEE) and radiant intensity have been proposed and demonstrated.The LEE and radiant intensity of the lateral LEDs with nitrogen implanted CBL was found to be greatly increased compared to that of a conventional LED due to an increase effective current path,which reduce the reduction in light absorption at the thick p-pad electrode.Experimental results show that the LEE and radiant intensity of lateral LEDs with embedded 30 nm projected range (Rp) implant CBL were enhanced by 4.1% and 6.57mW at an applied current of 80mA compared to that of conventional LEDs,respectively.In addition,the change of radiant intensity,LEE,internal quantum efficiency (IQE),and external quantum efficiency (EQE) by different Rp,different implant CBL widths,and different of ion implant dose also discussed and demonstrated.
Light emitting diode Current blocking layer Implant EQE IQE
Min Joo Park Yong Deok Kim Keagan Chen Morgan Evans Hugues Marchand Joon Seop Kwak
Department of Printed Electronics Engineering and World-class university program, Sunchon National U Implant Application Development LED Team, Applied Materials, Boston, Massachusetts, USA
国际会议
9th China International Forum on Solid State Lighting(第九届中国国际半导体照明论坛)
广州
英文
118-120
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）