Preparation and Simulation of LED with A(l)(l)nGaN Barriers

摘要：

　　In this paper,LED with AIInGaN barriers which affect the crystal quality in MQWs and the lighting performance of LED device is studied.In the X-ray diffraction (XRD) testing,comparing to the conventional LED,the crystal quality of LED with A(l)(l)nGaN barriers is decreased.There is serious composition segregation,dislocation and other defects which cause the bad crystal quality.The LED with A(l)(l)nGaN barriers shows better LOP (light output power) in the integrating sphere testing.At the current of 100 mA,LED with A(l)(l)nGaN barriers LOP increase 15% comparing to the conventional LED.It is mainly issue from the better constraint of electrons and better holes injection.

关键词： quatemary quantum barrier LOP holes injection

作者: Xiangxu Feng Naixin Liu Ning Zhang Lian Zhang Junxi Wang Jinmin Li

作者单位: Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, Peoples Republic of China

会议类型: 国际会议

会议名称: 9th China International Forum on Solid State Lighting(第九届中国国际半导体照明论坛)

会议地点: 广州

会议语种:英文

页码: 188-190

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）