Effect of Thermal Annealing Atmosphere on GaN-Based LEDs with Ga-doped ZnO Electrodes

摘要：

　　Ga-doped ZnO (GZO) thin films were prepared by RF magnetron sputtering as transparent conductive layer (TCL) of GaN-based LEDs.The effects of different annealing atmospheres on optical and electrical property of LED with GZO electrodes were studied.Resisitivity as low as 2.8×10-4 Ω·cm and visible transmittance above 80% of GZO films were obtained by annealing.The luminous intensity for LED annealed in air and nitrogen ambients were nearly twice compared to that without annealing.These results confirmed that annealing atmosphere play the crucial role on the properties of LED with GZO electrodes.

关键词： GZO GaN-based LED annealing sputtering

作者: Gu Wen Shi Ji-Feng Li Xi-Feng Zhang Jianhua

作者单位: School of Mechatronics Engineering and Automation, Shanghai University, Shanghai, P.R.China; Key Lab Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai Univer

会议类型: 国际会议

会议名称: 9th China International Forum on Solid State Lighting(第九届中国国际半导体照明论坛)

会议地点: 广州

会议语种:英文

页码: 220-223

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）