The Fabrication Of Gan-Based High-Voltage Light-Emitting Diodes Array

摘要：

　　In this study,we report a new structure of the GaN-based light-emitting diodes which can be operated under high voltage and low current.The new type high-voltage light-emitting diodes (HV-LED) can have higher luminous efficiency and reduce the whole cost of LED lamps.The key chip fabrication processing methods determine the superior characteristic of HV-LED,just as deep etching,sidewall isolation and electrode interconnection.For enhancing the reliability of this new type high voltage device,the air bridge electrode was fabricated to interconnect each microchip.Also,we design a new type chip layout which can get different operation working voltage according to the different laser cutting position.

关键词： GaN LED high voltage

作者: Teng Zhan Yang Zhang Jing Li Xiaoyang Yi Guohong Wang

作者单位: Institute of Semiconductors, Chinese Academy of Sciences, Semiconductor Lighting R&D Center, Chinese Academy of Sciences Room 422, Building 5, A35, Qinghua East Road, Haidian District, Beijing, 100083, P.R.China

会议类型: 国际会议

会议名称: 9th China International Forum on Solid State Lighting(第九届中国国际半导体照明论坛)

会议地点: 广州

会议语种:英文

页码: 224-226

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）