A Review of the Influential Factors on the Ferroelectric Domain Structure in BiFeO3 Thin Films

摘要：

　　BiFeO3 is a very promising multiferroic materials,which can present ferroelectric and antiferromagnetic properties at room temperature (Tn=643 K,Tc=1103 K).Ferroelectric domains in BiFeO3 thin films have attracted much attention due to their potential applications in memory devices.The aim of this paper is to review the main factors which can influence the ferroelectric domain structure in BiFeO3 thin films,including substrate,doping and film thickness.

关键词： BiFeO3 thin films Ferroelectric domain Influential factors

作者: Yaoting Huang Xiuli Fu Xiaohong Zhao Weihua Tang

作者单位: School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,P.R.China

会议类型: 国际会议

会议名称: 3rd International Conference on Testing and Evalution of Inorganic Materials(第三届无机材料测试与评价学术年会(TEIM2012))

会议地点: 景德镇

会议语种:英文

页码: 219-225

在线出版日期: 2012-10-15（万方平台首次上网日期，不代表论文的发表时间）