Effect of Oxygen Partial Pressure on Properties of ZnO Films Deposited on Freestanding Diamond Films

摘要：

　　Highly c-axis-oriented zinc oxide (ZnO) films were deposited successfully on the nucleation sides of freestanding diamond (FSD) films by the direct current (DC) magnetron sputtering method in an oxygen (O2) + argon (Ar) gas mixture.The effect of oxygen partial pressure on properties of ZnO films was investigated by X-ray diffraction (XRD).The results showed that when flux ratio of argon to oxygen was 1,the ZnO films had a better crystalline quality.

关键词： zinc oxide magnetron sputtering diamond

作者: Ke Tang Linjun Wang Jian Huang Bing Ren Jie Zhou Jun Le Yiben Xia

作者单位: School of Materials Science and Engineering,Shanghai University,No.149 Yanchang Road,Shanghai,200072,China

会议类型: 国际会议

会议名称: 3rd International Conference on Testing and Evalution of Inorganic Materials(第三届无机材料测试与评价学术年会(TEIM2012))

会议地点: 景德镇

会议语种:英文

页码: 230-233

在线出版日期: 2012-10-15（万方平台首次上网日期，不代表论文的发表时间）