Optimization of poly-silicon deposition process for switch
Aiming at the severe effect of poly-silicon deposition process on the performance of polysilicon swtich,experiments were made on optimization ofpoly-silicon deposition and releasing the stress ofpolysilicon beams to obtain optimal process conditions.By using the optimizing process,the fabrication process for polysilicon mechanical switch is designed,and a poly-silicon micromachined RF MEMS(radio frequency microelectronic machined system) switch has been fabricated.The switch is tested,the results are as follows:the off-state capacitance and on-state capacitance are 0.1 p F and 2.5p F,respectively,and the pull down voltage is 45V.Those optimizing key process technology for fabrication polysilicon mechanical switches is useful,and will be a base for developing RF switch systems with IC.
poly-silicon anneal cantilever beam switch
Zhengyuan Zhang Yang Cao Yong Mei Zhicheng Feng Jiangen Li Guoxiang Hu
National Laboratory of Analog Integrated Circuits,Chongqing,China 400060 Sichuan institute of solid-state circuits,Chongqing,China 400060
国际会议
沈阳
英文
927-930
2012-09-26（万方平台首次上网日期，不代表论文的发表时间）