Influence of Laser Incident Energy on Chemical Composition, Crystal Structure, MOrphology and Band Gap of Cu2ZnSnS4 Thin Films by Pulsed Laser Deposition
The Cu2ZnSnS4 (CZTS) thin films were successfully prepared on glass substrate by pulsed laser deposition (PLD) using CZTS target.The laser incident energy was varied from 3 J·cm-2 to 6 J·cm-2 at the interval of 1 J·cm2,and its influence on chemical composition,crystal structure,morphology and band gap of CZTS thin films was investigated by energy dispersive X-ray spectroscopy (EDS),X-ray diffraction (XRD),atomic force microscopy (AFM) and ultraviolet-visible-near infrared (UV-Vis-NIR) absorption spectra,respectively.The result of EDS indicated that these CZTS thin films were Cu-rich and S-poor.The XRD study showed CZTS thin films exhibited strong preferential orientation of grains along 112 direction.The band gap of CZTS thin films was 1.72,1.37,1.25 and 1.11 eV corresponding to incident laser energy of 3,4,5 and 6 J·cm-2.
Cu2ZnSnS4 thin film pulsed laser deposition laser incident energy
Yanan Wen Lin Li Yan Dong Min Yao Qi Liang
School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230009,China School of Chemical Engineering,Hefei University of Technology,Hefei 230009,China
国际会议
沈阳
英文
1088-1091
2012-09-26（万方平台首次上网日期，不代表论文的发表时间）