Design and process simulation on power device IGBT

摘要：

　　An igbt cell structure based on semiconductor physics were designed.The process parameters of the high-voltage igbt have been calculated and adjusted.Using the optimal devices dimensions,the doping concentration was analyzed systematically.Additionally,a simulating model of igbt was compiled based on sentaurus process.According to this model simulation,an optimized device parameters design was further determined.Finally,the device drain-source breakdown voltage has satisfied a standard value of 1450v.whereas its threshold voltage is 4.2v,which is in the prerequisite range of 3~5v.

关键词： IGBT Breakdown voltage ON-resistance TCAD

作者: ZHANG Hao-dong LI Miao ZHANG Jian ZHENG Shou-guo HU Lan ZHU Qin-qin YUAN Yuan

作者单位: Hefei Institutes of Physical Science,Chinese Academy of Sciences,China;Army Officer Academy of PLA,C Hefei Institutes of Physical Science,Chinese Academy of Sciences,China Hefei Institutes of Physical Science,Chinese Academy of Sciences,China;China Sciences Intelligent Ag Army Officer Academy of PLA,China

会议类型: 国际会议

会议名称: the 2nd International Conference on Electronic & Mechanical Engineering and Information Technology (EMEIT-2012)(2012年电机工程与信息技术国际会议)

会议地点: 沈阳

会议语种:英文

页码: 2112-2115

在线出版日期: 2012-09-26（万方平台首次上网日期，不代表论文的发表时间）