Thermodynamic Calculation for Chemical Vapor Deposition of BCl3-NH3-SiCl4-H2-Ar System

摘要：

　　The stability thermodynamic diagrams for BCl3-NH3-SiCl4-H2-Ar system were calculated.The effects of partial pressure of reactants,deposition temperature and total pressure on distribution regions of reacted solid products in the stable diagrams were discussed.The results are as follows: (1) the deposition temperature has the most important effect on the reacted solid products.The region of BN+ Si3N4 increases with the temperature rise under 900℃,and decreases above 900℃.Too high temperature is not beneficial for the generation of Si3N4.(2) When the temperature and total pressure are constant,BN exists in all over the diagram.And only when the partial pressure of NH3 is high,and the partial pressure of SiCl4 is not very low,can the region of BN+Si3N4 exists.(3) The effect of system total pressure is complex,and it works together with the deposit temperature.The temperature range of 700 to 900 ℃ and the low total pressure are the best conditions for the deposition.

关键词： BCl3-NH3-SiCl4-H2-Ar System Thermodynamic Diagram Partial Pressure of Reactants Deposition Temperature Total Pressure

作者: Zan Li Laifei Cheng Fang Ye Yongsheng Liu Litong Zhang

作者单位: Science and technology on Thermostructure Composite Materials Laboratory,Northwestern Polytechnical University,Xian,Shaanxi 710072,China

会议类型: 国际会议

会议名称: The tenth China-Japan joint conference on Composite Materials (第10届中日复合材料学术会议(CJJCC-10))

会议地点: 成都

会议语种:英文

页码: 519-519

在线出版日期: 2012-09-08（万方平台首次上网日期，不代表论文的发表时间）