Effects of Annealing Temperature on Crystallization Feature of BaSi2 Films

摘要：

　　The pure barium is used as target to deposit Ba films on p-Si(111) substrates by magnetron sputtering system,then the films as-deposited are subsequently annealed by annealing furnace with various temperature.The crystal structure,surface morphology and electricity property of the films annealed are characterized by X-ray diffraction,scanning electron microscope and Hall-effect instrument,respectively.The results show the annealing temperature favoring orthorhombic BaSi2 film growth is about 800℃.

关键词： BaSi2 film Crystal structure Surface morphology Electricity property

作者: Zhengtong Hao Ziyi Yang

作者单位: School of Physics and Electronic Engineering; Mianyang Normal University; Mianyang, 621000,China Department of physics and Electronic science; Guiyang University; Guizhou Guiyang 550005,China

会议类型: 国际会议

会议名称: 2012 2nd international Conference on Materials Science and Information Technology(2012第二届材料科学与信息技术国际会议)(MSIT2012)

会议地点: 西安

会议语种:英文

页码: 149-152

在线出版日期: 2012-08-24（万方平台首次上网日期，不代表论文的发表时间）