SOS Wafer Cu Pillar Bumping Process Development for Flip Chip Package Application

摘要：

　　Cu pillar bumping process has been developed on SOS (Silicon on Sapphire) wafer for flip chip package application while in the initial packaging experiment open failure has been found.Voiding in bump pad metal has been found in package failure analysis.The cracks initiated from the voiding have also been captured.Further investigation has confirmed that the surface roughness of bump pad metal is closely related to this failure.The voiding was formed for that the bump pad metal was etched away by plating solvent in bumping process.Solutions on process and bump metal structure design have been discussed and presented with evaluation experiment results in this paper.

作者: John Zhiyuan Yang

作者单位: Peregrine Semiconductor9380 Carroll Park Drive,San Diego,CA 92121,USA

会议类型: 国际会议

会议名称: 2012 International Conference on Electronic Packaging Technology & Hiigh Pachaging(2012电子封装和高密度封装国际会议(ICEPT-HDP2012))

会议地点: 桂林

会议语种:英文

页码: 1-7

在线出版日期: 2012-08-13（万方平台首次上网日期，不代表论文的发表时间）