Synthesis of Multiferroic Ba0.7Sr0.3TiO3-Based Thin Films for Memory Devices by Chemical Solution Deposition

摘要：

　　The multiferroic magnetoelectric Ba0.7Sr0.3TiO3-based films were prepared by sol-gel method.After annealing at 700 ℃,the barium strontium titanate films showed highly crystalline structure with no impurity phase.The Ba0.7Sr0.3TiO3/Ba0.7Sr0.3TiO3- Ni0.8Zn0.2Fe2O4/Ba0.7Sr0.3TiO3 (BSTO/BSTONZFO/ BSTO) thin films presented higher saturation polarization and lower leakage current density than BSTONZFO.The magnetic property of BSTO/ BSTO-NZFO/BSTO film was studied at room temperature,and the values of saturation magnetization and coercivity were 57.2 memu/cm3 and 7.156 Oe,respectively.

作者: Bin Li Chunqing Wang Wei Liu Ying Zhong Zhixin Zhang

作者单位: State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,Ch State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,Ch

会议类型: 国际会议

会议名称: 2012 International Conference on Electronic Packaging Technology & Hiigh Pachaging(2012电子封装和高密度封装国际会议(ICEPT-HDP2012))

会议地点: 桂林

会议语种:英文

页码: 12-14

在线出版日期: 2012-08-13（万方平台首次上网日期，不代表论文的发表时间）