Effect of Additives on Copper Electroplating Profile for TSV Filling

摘要：

　　3D integration with TSVs is emerging as a promising technology for the next generation integrated circuits.TSV filling is a critical process in TSV fabrication and has direct effect on electrical performance of TSVs.In this paper,we mainly focus on effect of additives used in methanesulfonic based solution on copper electroplating filling.Numerical simulation based on an absorption-diffusion model has been carried out with electrochemical data.TSV filling experiment results with different additive concentrations are presented and void-free TSV filling has been achieved.

作者: Yunhui ZHU Yuan BIAN Xin SUN Shenglin MA Qinghu CUI Xiao ZHONG Jing CHEN Min MIAO Yufeng JIN

作者单位: National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Peking University,Beijin Peking University Shenzhen Graduate school,Shenzhen,518055,China National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Peking University,Beijin

会议类型: 国际会议

会议名称: 2012 International Conference on Electronic Packaging Technology & Hiigh Pachaging(2012电子封装和高密度封装国际会议(ICEPT-HDP2012))

会议地点: 桂林

会议语种:英文

页码: 56-59

在线出版日期: 2012-08-13（万方平台首次上网日期，不代表论文的发表时间）