Effect of Dummy Via on the SIV Performance of Narrow-Wide Copper Interconnection

摘要：

　　Based on the stress induced void theory,three kinds of narrow-wide two-layer copper interconnection structure with dummy via in M1 were designed and put under different high temperature conditions for test.Under the action of high temperature,influence of dummy vias in lower layer metal ( M1 ) on the failure phenomenon of the interconnect structure was analyzed.The result shows,adding dummy via in M1 can effectively improve the SIV performance of copper interconnection.Based on this,a more accurate equation was put forward to describe the behavior of the vacancy in the structure with dummy via spreading from the diffusion source to the accumulation.

作者: LIN Xiao-ling LI Meng XIAO Qing-zhong Zhang Xiao-wen

作者单位: Science and Technology on Reliability Physics and Application of Electrical Component Laboratory,Chi Machinery Engineering and Automation Program,Changchun University,Changchun,130022,China

会议类型: 国际会议

会议名称: 2012 International Conference on Electronic Packaging Technology & Hiigh Pachaging(2012电子封装和高密度封装国际会议(ICEPT-HDP2012))

会议地点: 桂林

会议语种:英文

页码: 336-339

在线出版日期: 2012-08-13（万方平台首次上网日期，不代表论文的发表时间）