Theoretical study on power factor of Si/Ge multi-layer thermoelectric micro-cooler
Thermoelectric (TE) micro-cooling is expected to solve the reliability problem caused by rapidly increasing packaging density of IC chips,but as the characteristic length approaching de Broglie wavelength of carriers,electrical transport will show great size effects,and consequently affect power factor,which is the numerator of TE figure of merit.In this paper,power factor of Si/Ge multi-layer TE micro-cooler has been investigated by 2-D Monte Carlo (MC) simulator GNU Archimedes.The results show that,as the thickness of monolayer approaching several nanometers,the quantum effects show great impact on electrical transport,causing electrical conductivity increase of about an order of magnitude,and Seebeck coefficient decrease of about 40%,hence,optimized thickness of multi-layer structures can make full use of quantum effects to enhance the power factor of TE devices.
Leilei Han Chunqing Wang Chunjin Hang
State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology 92＃,Xidazhi Street,Harbin,China
国际会议
桂林
英文
637-640
2012-08-13（万方平台首次上网日期，不代表论文的发表时间）