Thermal resistance analysis by numerical method for power device packaging

摘要：

　　Thermal resistance is a key thermal parameter to determine the junction temperature of the electronic device and give reference to further thermal design in complex applications both for manufacturer and user.In this paper,junction to case resistance(RθJC) measurement of power device in TO3P package is provided with ANSYS finite element analysis model under two different boundary conditions.The method and model in simulation employed in this analysis is verified by correlating with the value in the datasheet of real package device.Consequently,the validated method was used to investigate the influence of power load,case temperature,material parameter and die size on RθJC.It is found that RθJC has positive correlation with the heating power and case temperature because of the negative relation between temperature and the thermal conductivity of silicon.Besides,RθJC of TO3P package is more sensitive to the change of thermal conductivity of die attach than that of epoxy mould compound.It also reveals that TO3P package is more suitable for packaging large chips in terms of reducing RθJC.

作者: Hao Wu Ming Chen Liming Gao Ming Li

作者单位: Institute of Microelectronic Materials & Technology,School of Materials Science and Engineering,Shan Advanced Micro Devices Business Unit,Shanghai Belling Corp.Ltd.,810 Yishan Rd.,Shanghai,China,200233

会议类型: 国际会议

会议名称: 2012 International Conference on Electronic Packaging Technology & Hiigh Pachaging(2012电子封装和高密度封装国际会议(ICEPT-HDP2012))

会议地点: 桂林

会议语种:英文

页码: 666-670

在线出版日期: 2012-08-13（万方平台首次上网日期，不代表论文的发表时间）