A buffered distributed spray MOCVD reactor design

摘要：

　　We have developed a novel MOCVD reactor,which is called buffered distributed spray (BDS) MOCVD reactor,for the multiple wafer growth of films of Ⅲ-Ⅴ materials.In the present study,a fundamental and multi-field model based on the computational fluid dynamic (CFD) simulation of coupled flow,heat and mass transfer is presented to describe the epitaxial growth of gallium nitride (GaN).It is investigated how reactor geometry affects flow field,temperature profile,and concentration distribution.For comparison,a horizontal reactor with the same geometry is also modeled.The modeling results show that the BDS MOCVD reactor performs well in GaN growth.

作者: Shaolin Hu Zhiyin Gan Han Yan Sheng Liu

作者单位: Institute for Microsystems,State Key Lab for Digital Manufacturing Equipment & Technology,School of Division of MOEMS,Wuhan National Laboratory for Optoelectronics,Wuhan,China,430074;Guangdong RealFai Institute for Microsystems,State Key Lab for Digital Manufacturing Equipment & Technology,School of

会议类型: 国际会议

会议名称: 2012 International Conference on Electronic Packaging Technology & Hiigh Pachaging(2012电子封装和高密度封装国际会议(ICEPT-HDP2012))

会议地点: 桂林

会议语种:英文

页码: 986-989

在线出版日期: 2012-08-13（万方平台首次上网日期，不代表论文的发表时间）