Dissolution of Substrates in Line-type Cu/Sn/Cu and Cu/Sn/Ni Interconnects under Current Stressing

摘要：

　　The line-type Cu/Sn/Cu and Cu/Sn/Ni interconnects were used to investigate the dissolution of substrates under a current density of 2.0×104 A/cm2 at 150℃ for 50 h,100 h and 200 h.For comparison,the line-type Cu/Sn/Cu and Cu/Sn/Ni interconnects were also aged at 150 oC for 50h,100 h and 200 h.According to the experimental results,as the cathodes,no matter Cu or Ni,the dissolution of substrates in both Cu/Sn/Cu and Cu/Sn/Ni interconnects was in linear relationship with time.The dissolution rate of the Cu cathodes in Cu/Sn/Cu interconnects was approximately equal to that in Cu/Sn/Ni interconnects,indicating that the anode material had little effect on the dissolution of Cu cathodes.While in Cu/Sn/Ni interconnects,the Cu substrates dissolved more easily than the Ni substrates under the same conditions,i.e.,Ni had a better electromigration (EM) resistance than Cu.

作者: Song Pan Mingliang Huang Ning Zhao Shaoming Zhou Zhijie Zhang

作者单位: Electronic Packaging Materials Laboratory,School of Materials Science & Engineering,Dalian University of Technology,Dalian,China,116024

会议类型: 国际会议

会议名称: 2012 International Conference on Electronic Packaging Technology & Hiigh Pachaging(2012电子封装和高密度封装国际会议(ICEPT-HDP2012))

会议地点: 桂林

会议语种:英文

页码: 1399-1402

在线出版日期: 2012-08-13（万方平台首次上网日期，不代表论文的发表时间）