Stress and deformation mechanics model of sensing structure in micro-machined capacitive SOl accelerometer
Due to the micro-machined processes,there is residual stress in device layer of capacitive SOl accelerometer,which results in the deformation in sensing structure and hence,makes the device fail to work.To cope with the problem,based on the stress and stress gradient in device layer,in light of the mechanics theory and by dividing the proof-mass into several continuous varied cross-section beams,utilizing symmetric continuous conditions and deformation compatibility,a stress and deformation mechanics model of sensing structure in SOI accelerometer is proposed.By the comparison between the model and experiment data,which is obtained SOI device layer 50 pm and oxide layer 5 μm and model,it is indicated that the model could basically describe the sensing structure deformation.The model could hopefully be helpful in further exploration on stress and deformation in MEMS structure.
Stress and deformation mechanics model sensing structure SOl accelerometer
Dai Qiang Zhang Yue Xu Bin Jiang Gang Song Danlu Cai Yong
Key Laboratory of Testing Technology for Manufacturing Process, Southwest University of Science and Technology, Ministry of Education, Mian Yang, China
国际会议
香港
英文
482-488
2012-07-27（万方平台首次上网日期，不代表论文的发表时间）