Thermal conductivity of SOI LDMOS device

摘要：

　　In this paper,the thermal conductivity of lateral double diffused metal oxide semiconductor (LDMOS) was studied.In order to optimize their properties,the LDMOS device based on the lower surface of field (RESURF) theory join the second field plate technology.Power device self-heating effect will affect the carrier mobility,making its negative resistance effect in Ⅳ characteristic curve under the high-power condition.As the thermal conductivity of SiO2 is low,the self-heating effect of SOI device is more obvious.The simulation using Silvaco-TCAD software for different buried oxide (BOX) with different SOI layer thickness accordingly show that the thicker SOI layer and the thinner buried oxide layer,the smaller the self-heating effect.

关键词： RESURF Second field plate Self-Heating negative resistance

作者: Yan Xiong Yushu Lai

作者单位: College of Electronic and information Engineering,Chongqing Three Gorges University,Chongqing 404000,China

会议类型: 国际会议

会议名称: 2012 International Meeting on Opto-Electronics Engineering and Materials Research(OEMR2012)(2012光电工程与材料国际会议)

会议地点: 沈阳

会议语种:英文

页码: 8-12

在线出版日期: 2012-07-27（万方平台首次上网日期，不代表论文的发表时间）