Influence of electron irradiation on the yellow luminescence in undoped n-GaN

摘要：

　　The yellow luminescence (YL) band in unintentional doped n-GaN irradiated by 10 MeV electrons has been investigated by means ofphotoluminescence (PL) spectroscopy.The YL intensity increased after electron irradiation and thermal annealing,indicating that the deep level defects are created by electron irradiation and thermal annealing.These deep level point defect complexes arising from the irradiation introduced Ga vacancies and oxygen donor impurities are responsible for the YL.

关键词： GaN defects photoluminescence annealing

作者: Limin Liang Xinjian Xie Qiuyan Hao Yuan Tian Weizhong Sun Caichi Liu

作者单位: School of Materials Science and Engineering,Hebei University of Technology,Tianjin 300130,P.R.China

会议类型: 国际会议

会议名称: 2012 International Meeting on Opto-Electronics Engineering and Materials Research(OEMR2012)(2012光电工程与材料国际会议)

会议地点: 沈阳

会议语种:英文

页码: 125-128

在线出版日期: 2012-07-27（万方平台首次上网日期，不代表论文的发表时间）