Chemical Etching of Dislocations Process on Sapphire

摘要：

　　In this work,the preferential chemical etching of dislocations on (0001) sapphire surface was investigated.The sapphire was etched by fused KOH etchant at fixed temperature for different time.The differences in the morphology of the etch pits on c-plane sapphire were observed by the optical microscope and atomic force microscopy.The results show that the optimal condition for dislocation displaying was etching 15 min or 25 min with fused KOH at 290 ℃.The morphologies of the etch pits were changed from the triangle to the polygon and three kinds ofincrescent mechanisms about the etch pits are put forward and discussed in the paper.

关键词： sapphire dislocation chemical etching KOH etchant

作者: Xinjian Xie Qiuyan Hao Limin Liang Yinying Li Caichi Liu

作者单位: School of Materials Science and Engineering,Hebei University of Technology,Tianjin 300130,P.R China Tianjin Hongqiao Hospital,Tianjin 300130,P.R.China

会议类型: 国际会议

会议名称: 2012 International Meeting on Opto-Electronics Engineering and Materials Research(OEMR2012)(2012光电工程与材料国际会议)

会议地点: 沈阳

会议语种:英文

页码: 143-146

在线出版日期: 2012-07-27（万方平台首次上网日期，不代表论文的发表时间）