GaN Layer Grown by Hydride Vapor Phase Epitaxy:Influence of the Reactor Pressure

摘要：

　　In this paper,the influence of reactor pressure on the quality of GaN epilayer grown by Hydride vapor phase epitaxy (HVPE) is reported.A series of sample was fabricated at 0.2,0.5,0.7 and 1 atm.There were several samples at certain pressure in order to avoid the random affection.And the root mean square (RMS) is introduced to determine the repeatability.The rocking curve and photoluminescence spectrum are used to evaluate the quality of the grown epilayer.The reactor pressure has affection on the quality ofGaN epilayer.Low reactor pressure is helpful to improving the quality of crystal structure.

关键词： GaN Hydride vapor phase epitaxy HVPE photoluminescence pressure

作者: Xinjian Xie Qiuyan Hao Limin Liang Yinying Li Caichi Liu

作者单位: School of Materials Science and Engineering,Hebei University of Technology,Tianjin 300130 P.R China Tianjin Hongqiao Hospital,Tianjin 300130,P.R.China

会议类型: 国际会议

会议名称: 2012 International Meeting on Opto-Electronics Engineering and Materials Research(OEMR2012)(2012光电工程与材料国际会议)

会议地点: 沈阳

会议语种:英文

页码: 147-150

在线出版日期: 2012-07-27（万方平台首次上网日期，不代表论文的发表时间）