MOCVD Growth and Optical Properties of Self-assembled InAs/GaAs Quantum Dots

摘要：

　　InAs/GaAs quantum dots structures are grown by meta-organic chemical vapor deposition.The effects of growth temperatures on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence.An areal density of 9.3 × 109cm2 and a strongly enhanced photoluminescence intensity are obtained at the temperature of 505℃,furthermore,the low and high growth temperature tend to form coalescent islands and decrease the intensity of photoluminescence spectra.

关键词： Quantum dots Optical Properties MOCVD growth temperature

作者: Peng Tian Chongqing Huang Wenhua Luo Jing Liu

作者单位: College of Physics and Electronics,Hunanlnstitute of Science and Technology,Yueyang,Hunan,414006,Chi College oflnformation & Communication Engineering,Yueyang,Hunanlnstitute of Science and Techonology,

会议类型: 国际会议

会议名称: 2012 International Meeting on Opto-Electronics Engineering and Materials Research(OEMR2012)(2012光电工程与材料国际会议)

会议地点: 沈阳

会议语种:英文

页码: 265-268

在线出版日期: 2012-07-27（万方平台首次上网日期，不代表论文的发表时间）