The impact of cap layers on the structural and optical properties of Self-assembled InAs/GaAs Quantum Dots

摘要：

　　Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition.The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence.Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.

关键词： Quantum dots Optical Properties MOCVD cap layer

作者: Peng Tian Chongqing Huang Wenhua Luo Jing Liu

作者单位: College of Physics and Electronics,Hunanlnstitute of Science and Technology,Yueyang,Hunan,414006,Chi College oflnformation & Communication Engineering,Yueyang,Hunanlnstitute of Science and Techonology,

会议类型: 国际会议

会议名称: 2012 International Meeting on Opto-Electronics Engineering and Materials Research(OEMR2012)(2012光电工程与材料国际会议)

会议地点: 沈阳

会议语种:英文

页码: 269-272

在线出版日期: 2012-07-27（万方平台首次上网日期，不代表论文的发表时间）