The effects of selenization temperature on the properties of CIGS thin film prepared by Cu-ln-Ga-Se precursors

摘要：

　　CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors,as a new method,the effects of selenization temperature on the properties of CIGS thin films were studied.First,Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method.Then,precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films.The degree of reaction and morphology of films as a function of selenization temperature were analyzed.By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD),it was found that CIGS thin films selenized at 450℃ exhibit chalcopyrite phase with preferred orientation along the (112) plane.

关键词： CIGS thin films Cu-ln-Ga-Se precursors Selenization temperature

作者: Han-Bin Wang Xi-Jian Zhang Qing-Pu Wang Xue-Yan Zhang Xiao-Yu Liu

作者单位: School of Physics, Shandong University, Jinan, Shandong, P.R.China

会议类型: 国际会议

会议名称: the 2012 International Conference on Frontiers of Nanoscience and Technology(2012年纳米科学与技术国际会议(ICFNST 2012))

会议地点: 香港

会议语种:英文

页码: 214-218

在线出版日期: 2012-07-26（万方平台首次上网日期，不代表论文的发表时间）