Growth and measurement of Mg doped AlGaN/GaN superlattice with low resistiviy

摘要：

　　Although the research of bulk GaN material has take great progress in recent years,while the high quality of p-type GaN material still is an obstacle to fabricate the HBT and LD devices.In this paper we growth a group of Mg doped AlGaN/GaN superlattices under variant conditions.The Hall,AFM,PL and HR-XRD measurement are taken to find the relationship of sample quality with the superlattice structure,growth and annealing conditions.The results show that the period length of about 9nm and Al content of 30% is the optimal structure; the best annealing temperature under tmosphere is about 540℃ to 580℃.At last the p-type AlGaN/GaN superlattice with resistivity of 0.3lΩ·cm is fabricated which can be utilize for the contact layers of blue LEDs.

关键词： GaN superlattice measurement resistivity p-type

作者: Junfeng Chen

作者单位: The Department of Communication Engineering, Engineering college of Chinese Peoples Armed Police Force, 710086, Xian,ShaanXi, China

会议类型: 国际会议

会议名称: 2012 2nd International Symposium on Chemical Engineering and Material Properties(ISCEMP2012)(2012第二届化学工程与材料特性国际研讨会)

会议地点: 太原

会议语种:英文

页码: 274-277

在线出版日期: 2012-06-23（万方平台首次上网日期，不代表论文的发表时间）