XPS Spectra of Cu Thin Films Prepared by Ionized Cluster Beam Deposition

摘要：

　　The Cu thin films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique.The surface properties and atomic binding energy of Cu thin films were studied by X-ray Photoelectron Spectroscopy (XPS).The results show that for all XPS spectra of Cu/SiO2/Si (111) samples deposited by neutral cluster and ionized cluster beam (Vα=5 kV),the atomic binding energy of the films was no differences with bulk materials.The reason may be that the local energy deposition and atomic restructuring caused by surface treatment process resulting in the XPS spectra of the copper films was similar with bulk standard copper.

关键词： Cu Thin Films Ionized Cluster Beam (ICB) X-ray Photoelectron Spectroscopy (XPS) Atomic Binding Energy

作者: Bo Cao Tongrui Yang Gongping Li SeongJin CHO Hee KIM

作者单位: School of Nuclear Science and Engineering, North China Electric Power University, Beijing,102206, Ch School of Nuclear Science and Engineering, North China Electric Power University, Beijing,102206, Ch School of Nuclear Science and Technology, Lanzhou University, Lanzhou, 730000, China Department of physics, Kyungsung University, Pusan, 608-736, South Korea

会议类型: 国际会议

会议名称: 2012 2nd International Symposium on Chemical Engineering and Material Properties(ISCEMP2012)(2012第二届化学工程与材料特性国际研讨会)

会议地点: 太原

会议语种:英文

页码: 720-723

在线出版日期: 2012-06-23（万方平台首次上网日期，不代表论文的发表时间）